tlv.42.. vishay semiconductors 1 (10) rev. a3, 05-oct-00 www.vishay.com document number 83057 backlighting led in 3 mm tinted non-diffused package color type technology angle of half intensity high efficiency red tlvh420. gaasp on gap 85 soft orange tlvs4200 gaasp on gap 85 yellow tlvy4200 gaasp on gap 85 green tlvg4200 gap on gap 85 pure green tlvp4200 gap on gap 85 description the tlv.4200 series was developed for backlighting. due to its special shape the spatial distribution of the radiation is qualified for backlighting. to optimize the brightness of backlighting a custom built reflector (with scattering) is required. uniform illumination can be enhanced by covering the front of the reflector with diffusor material. this is a flexible solution for backlighting different areas. features high light output wide viewing angle categorized for luminous flux tinted clear package low power dissipation low self heating rugged design high reliability 96 11664 applications backlighting of display panels, lcd displays, symbols on switches, keyboards, graphic boards and measuring scales illumination of large areas e.g. dot matrix displays absolute maximum ratings t amb = 25 c, unless otherwise specified tlvh4200 , tlvs4200 , tlvy4200 , tlvg4200 , tlvp4200 parameter test conditions symbol value unit reverse voltage v r 6 v dc forward current t amb 60 c i f 30 ma surge forward current t p 10 s i fsm 1 a power dissipation t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb 40 to +100 c storage temperature range t stg 55 to +100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient r thja 400 k/w
tlv.42.. vishay semiconductors 2 (10) rev. a3, 05-oct-00 www.vishay.com document number 83057 optical and electrical characteristics t amb = 25 c, unless otherwise specified high efficiency red ( tlvh4200 ) parameter test conditions type symbol min typ max unit luminous flux i f =15ma tlvh4200 v 10 25 mlm luminous flux i f = 15 ma tlvh4201 v 16 32 mlm dominant wavelength i f = 10 ma d 612 625 nm peak wavelength i f = 10 ma p 635 nm angle of half intensity i f = 10 ma j + 85 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf soft orange ( tlvs4200 ) parameter test conditions type symbol min typ max unit luminous flux i f = 15 ma v 10 25 mlm dominant wavelength i f = 10 ma d 598 611 nm peak wavelength i f = 10 ma p 605 nm angle of half intensity i f = 10 ma j + 85 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf yellow ( tlvy4200 ) parameter test conditions type symbol min typ max unit luminous flux i f = 15 ma v 10 20 mlm dominant wavelength i f = 10 ma d 581 594 nm peak wavelength i f = 10 ma p 585 nm angle of half intensity i f = 10 ma j + 85 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf green ( tlvg4200 ) parameter test conditions type symbol min typ max unit luminous flux i f = 15 ma v 10 30 mlm dominant wavelength i f = 10 ma d 562 575 nm peak wavelength i f = 10 ma p 565 nm angle of half intensity i f = 10 ma j + 85 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf
tlv.42.. vishay semiconductors 3 (10) rev. a3, 05-oct-00 www.vishay.com document number 83057 pure green ( tlvp4200 ) parameter test conditions type symbol min typ max unit luminous flux i f = 15 ma v 4 10 mlm dominant wavelength i f = 10 ma d 555 565 nm peak wavelength i f = 10 ma p 555 nm angle of half intensity i f = 10 ma j 85 deg forward voltage i f = 20 ma v f 2.4 3 v reverse voltage i r = 10 a v r 6 15 v junction capacitance v r = 0, f = 1 mhz c j 50 pf typical characteristics (t amb = 25 c, unless otherwise specified) 020406080 0 25 50 75 100 125 p power dissipation ( mw ) v t amb ambient temperature ( c ) 100 95 10904 figure 1. power dissipation vs. ambient temperature 0 10 20 30 40 60 020406080 i forward current ( ma ) f t amb ambient temperature ( c ) 100 95 10905 50 figure 2. forward current vs. ambient temperature 0.01 0.1 1 10 1 10 100 1000 10000 t p pulse length ( ms ) 100 95 10047 i forward current ( ma ) f t p /t=0.01 0.02 0.05 0.1 0.2 1 0.5 t amb 65 c figure 3. forward current vs. pulse length
tlv.42.. vishay semiconductors 4 (10) rev. a3, 05-oct-00 www.vishay.com document number 83057 0.4 0.2 0 0.2 0.4 0.6 96 11608 0.6 0 30 10 20 40 50 60 70 80 i relative luminous intensity v rel 0.8 1.0 0.8 1.0 figure 4. rel. luminous intensity vs. angular displacement 02468 0.1 1 10 100 1000 10 95 10026 v f forward voltage ( v ) i forward current ( ma ) f high efficiency red t p /t=0.001 t p =10 s figure 5. forward current vs. forward voltage 0 0 0.4 0.8 1.2 1.6 95 10472 20 40 60 80 100 v rel t amb ambient temperature ( c ) high efficiency red i f =10ma relative luminous flux figure 6. rel. luminous flux vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10473 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 high efficiency red v rel relative luminous flux figure 7. rel. luminous flux vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10474 high efficiency red v rel relative luminous flux figure 8. relative luminous flux vs. forward current
tlv.42.. vishay semiconductors 5 (10) rev. a3, 05-oct-00 www.vishay.com document number 83057 590 610 630 650 670 0 0.2 0.4 0.6 0.8 1.2 690 95 10040 i relative luminous intensity v rel wavelength ( nm ) 1.0 high efficiency red figure 9. relative luminous intensity vs. wavelength 01234 0.1 1 10 100 v f forward voltage ( v ) 5 95 9990 i forward current ( ma ) f soft orange figure 10. forward current vs. forward voltage 020406080 0 0.4 0.8 1.2 1.6 2.0 100 96 11599 t amb ambient temperature ( c ) soft orange v rel relative luminous flux figure 11. rel. luminous flux vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 96 11600 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 soft orange v rel relative luminous flux figure 12. rel. luminous flux vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 96 11601 soft orange v rel relative luminous flux figure 13. relative luminous flux vs. forward current 570 590 610 630 650 0 0.2 0.4 0.6 0.8 1.2 670 95 10324 1.0 i relative luminous intensity v rel wavelength ( nm ) soft orange figure 14. relative luminous intensity vs. wavelength
tlv.42.. vishay semiconductors 6 (10) rev. a3, 05-oct-00 www.vishay.com document number 83057 02468 0.1 1 10 100 1000 10 95 10030 v f forward voltage ( v ) i forward current ( ma ) f yellow t p /t=0.001 t p =10 s figure 15. rel. luminous flux vs. ambient temperature 0 0 0.4 0.8 1.2 1.6 95 10475 20 40 60 80 100 t amb ambient temperature ( c ) yellow i f =10ma v rel relative luminous flux figure 16. rel. luminous flux vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10476 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 yellow v rel relative luminous flux figure 17. rel. luminous flux vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10477 yellow v rel relative luminous flux figure 18. relative luminous flux vs. forward current 550 570 590 610 630 0 0.2 0.4 0.6 0.8 1.2 650 95 10039 i relative luminous intensity v rel wavelength ( nm ) 1.0 yellow figure 19. relative luminous intensity vs. wavelength 02468 0.1 1 10 100 1000 10 95 10034 v f forward voltage ( v ) i forward current ( ma ) f t p /t=0.001 t p =10 s green figure 20. forward current vs. forward voltage
tlv.42.. vishay semiconductors 7 (10) rev. a3, 05-oct-00 www.vishay.com document number 83057 0 0 0.4 0.8 1.2 1.6 95 10478 20 40 60 80 100 t amb ambient temperature ( c ) i f =10ma green v rel relative luminous flux figure 21. rel. luminous flux vs. ambient temperature 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 95 10479 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 green v rel relative luminous flux figure 22. rel. luminous flux vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 95 10480 green v rel relative luminous flux figure 23. relative luminous flux vs. forward current 520 540 560 580 600 0 0.2 0.4 0.6 0.8 1.2 620 95 10038 i relative luminous intensity v rel wavelength ( nm ) 1.0 green figure 24. relative luminous intensity vs. wavelength 01234 0.1 1 10 100 v f forward voltage ( v ) 5 95 9988 i forward current ( ma ) f pure green figure 25. forward current vs. forward voltage 020406080 0 0.4 0.8 1.2 1.6 2.0 100 96 11602 t amb ambient temperature ( c ) pure green v rel relative luminous flux figure 26. rel. luminous flux vs. ambient temperature
tlv.42.. vishay semiconductors 8 (10) rev. a3, 05-oct-00 www.vishay.com document number 83057 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 96 11603 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 pure green v rel relative luminous flux figure 27. rel. luminous flux vs. forw. current/duty cycle 110 0.01 0.1 1 10 i f forward current ( ma ) 100 96 11604 pure green v rel relative luminous flux figure 28. relative luminous flux vs. forward current 500 520 540 560 580 0 0.2 0.4 0.6 0.8 1.2 600 95 10325 1.0 i relative luminous intensity v rel wavelength ( nm ) pure green figure 29. relative luminous intensity vs. wavelength
tlv.42.. vishay semiconductors 9 (10) rev. a3, 05-oct-00 www.vishay.com document number 83057 dimensions in mm 9510954
tlv.42.. vishay semiconductors 10 (10) rev. a3, 05-oct-00 www.vishay.com document number 83057 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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